PhD - III-V-on-silicon transceivers for next generation wideband optical networks

Ghent University


PhD - III-V-on-silicon transceivers for next generation wideband optical networks

Last application date
Mar 03, 2019 23:59

TW05 - Department of Information technology

Limited duration

Master of Science in Photonics / Electrical Engineering or related

Occupancy rate

Vacancy Type
Research staff


Job description

Silicon photonics is a field that is maturing and attracting strong interest from industry and academia to realize miniaturized photonic systems for applications in datacommunication and telecommunication, as well as in other emerging fields, such as sensing. For the field of telecommunication, there is a need for highly integrated coherent transceivers, combining all passive and active functionality on a single chip. This requires the integration of III-V semiconductors on silicon photonic integrated circuits in a way that is mass manufacturable. The Photonics Research Group, an associated lab of imec, is at the forefront of the research in this area.


As a PhD researcher, you will work in the framework of the MSCA ITN ‘Wideband Optical Networks’ (WON). WON is a large scale European Training Network sponsored by the Horizon 2020 Marie Skłodowska-Curie actions in which academic and industrial partners provide research training on next generation wideband optical networks. The focus of the project is the development of the optical devices and sub-systems for the network of the future that allow operating over the entire O-band to L-band (1260nm to 1625nm), thereby enabling up to 250 Terabit/s optical communication over a single mode optical fiber.


A key component in such a wideband optical network is an O to L-band coherent transceiver. It is the goal of this PhD project to realize a prototype of such a device, by integrating an array of widely tunable lasers on a silicon photonic integrated circuit that implements the coherent transmitter (dual polarization I/Q modulator operating from O to L-band) and the coherent receiver (90 degree hybrid + high speed photodetectors). Operation at 64 GBaud / 16-QAM is targeted, to reach 400Gbit/s capacity per transceiver. The III-V widely tunable lasers will be integrated on the silicon photonic integrated circuit by a novel integration method called transfer printing enabling the dense and high throughput integration of III-V opto-electronic devices on a silicon photonic integrated circuit. While the silicon photonic integrated circuits will be processed in the imec 200mm CMOS pilot line, the transfer printing process will be developed by the PhD student in the UGent cleanrooms. After the prototype has been realized it will be first characterized using state of the art measurement facilities at Ghent University, including a coherent testbed, after which the device will be packaged and a field test in a real network will be carried out together with WON consortium partners. The program also offers the opportunity for a longer term stay at one of the consortium partner laboratories.


Profile of the candidate

  • You are an ambitious, passionate and talented student.

  • You have recently obtained a master degree in Photonics, Optical communication or Electrical engineering.

  • You have a good understanding of photonic integrated circuit technology and optical networks.

  • You possess good verbal and written English communication skills allowing you to effectively communicate with industrial and academic partners.


How to apply

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